A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction
نویسندگان
چکیده
منابع مشابه
A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction
Ion-sensitive, field-effect transistors (ISFET) have been useful biosensors in many applications. However, the signal-to-noise ratio of the ISFET is limited by its intrinsic, low-frequency noise. This paper presents an ISFET capable of utilizing lateral-bipolar conduction to reduce low-frequency noise. With a particular layout design, the conduction efficiency is further enhanced. Moreover, the...
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ژورنال
عنوان ژورنال: Sensors
سال: 2009
ISSN: 1424-8220
DOI: 10.3390/s91008336